Schottky vacancy

Schottky vacancy
Šotkio vakansija statusas T sritis radioelektronika atitikmenys: angl. Schottky vacancy vok. Schottky-Leerstelle, f rus. вакансия Шотки, m pranc. vacance de Schottky, f

Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. . 2000.

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  • Schottky-Leerstelle — Šotkio vakansija statusas T sritis radioelektronika atitikmenys: angl. Schottky vacancy vok. Schottky Leerstelle, f rus. вакансия Шотки, m pranc. vacance de Schottky, f …   Radioelektronikos terminų žodynas

  • Schottky, Walter — ▪ German physicist born July 23, 1886, Zürich, Switz. died March 4, 1976, Pretzfeld, W.Ger.       German physicist whose research in solid state physics and electronics yielded many devices that now bear his name.       Schottky obtained… …   Universalium

  • Schottky defect — A Schottky defect is a type of point defect in a crystal lattice named for Walter H. Schottky. The defect forms when oppositely charged ions leave their lattice sites, creating vacancies. These vacancies are formed in stoichiometric units, to… …   Wikipedia

  • vacancy — /vay keuhn see/, n., pl. vacancies. 1. the state of being vacant; emptiness. 2. a vacant, empty, or unoccupied place, as untenanted lodgings or offices: This building still has no vacancies. 3. a gap; opening; breach. 4. an unoccupied position or …   Universalium

  • vacance de Schottky — Šotkio vakansija statusas T sritis radioelektronika atitikmenys: angl. Schottky vacancy vok. Schottky Leerstelle, f rus. вакансия Шотки, m pranc. vacance de Schottky, f …   Radioelektronikos terminų žodynas

  • Šotkio vakansija — statusas T sritis radioelektronika atitikmenys: angl. Schottky vacancy vok. Schottky Leerstelle, f rus. вакансия Шотки, m pranc. vacance de Schottky, f …   Radioelektronikos terminų žodynas

  • вакансия Шотки — Šotkio vakansija statusas T sritis radioelektronika atitikmenys: angl. Schottky vacancy vok. Schottky Leerstelle, f rus. вакансия Шотки, m pranc. vacance de Schottky, f …   Radioelektronikos terminų žodynas

  • Deep-level transient spectroscopy — (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are …   Wikipedia

  • Crystallographic defect — Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials… …   Wikipedia

  • Leerstellen — Schematische Darstellung der Leerstellenbildung an einer Oberfläche Eine Leerstelle (englisch vacancy) ist in der Kristallographie ein Platz in der regelmäßigen Anordnung von Atomen, Ionen oder Molekülen im Kristallgitter, der unbesetzt ist.… …   Deutsch Wikipedia

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